ON Semiconductor HGTP20N60A4

SKU: HGTP20N60A4-9

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Manufacturer Part :
HGTP20N60A4
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
HGTP20N60A4 Datasheet :
HGTP20N60A4

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

1.8g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 20A, 3 Ω, 15V

Max Power Dissipation

290W

Factory Lead Time

44 Weeks

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Turn Off Delay Time

73 ns

Current Rating

70A

Continuous Collector Current

70A

Turn Off Time-Nom (toff)

160 ns

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

15 ns

Transistor Application

POWER CONTROL

Rise Time

12ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

70A

Turn On Time

28 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Element Configuration

Single

Power Dissipation

290W

Gate Charge

142nC

Current - Collector Pulsed (Icm)

280A

Td (on/off) @ 25°C

15ns/73ns

Switching Energy

105μJ (on), 150μJ (off)

Height

9.4mm

Length

10.67mm

Width

4.83mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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