ON Semiconductor MCH3333A-TL-H

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Description

Specification

Processor

Manufacturer	ON Semiconductor
Turn Off Delay Time	27 ns
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Number of Pins	3
Weight	124.596154mg
Current - Continuous Drain (Id) @ 25℃	2A Ta
Drive Voltage (Max Rds On, Min Rds On)	1.8V 4V
ECCN Code	EAR99
Mount	Surface Mount
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation (Max)	900mW Ta
Terminal Finish	Tin/Bismuth (Sn/Bi)
Rise Time	9.7ns
Drain to Source Voltage (Vdss)	30V
Number of Channels	1
Turn On Delay Time	5.7 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	215m Ω @ 1A, 4V
Input Capacitance (Ciss) (Max) @ Vds	240pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Vgs (Max)	±10V
Fall Time (Typ)	16 ns
Continuous Drain Current (ID)	2A
Gate to Source Voltage (Vgs)	10V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Manufacturer	Diodes Incorporated
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Number of Channels	1
Factory Lead Time	16 Weeks
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.5Ohm
Voltage - Rated DC	50V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	200mA
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Part Status	Active
Voltage	50V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Current	2A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	200mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Nominal Vgs	1.2 V
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Manufacturer	Diodes Incorporated
Part Status	Active
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
FET Type	N-Channel
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Max Operating Temperature	150°C
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Number of Elements	1
Number of Channels	1
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Power Dissipation	280mW
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Gate to Source Voltage (Vgs)	6V
Current - Continuous Drain (Id) @ 25°C	630mA Ta
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Rise Time	7.4ns
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Vgs (Max)	±6V
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Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	630mA
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Drain to Source Breakdown Voltage	20V
Input Capacitance	60.67pF
Drain to Source Resistance	300mOhm
Rds On Max	400 mΩ
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation-Max	500mW Ta
Factory Lead Time	10 Weeks
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
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Vgs(th) (Max) @ Id	1.8V @ 13μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	20.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C	190mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 10V
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SKU: IRF5210PBF-11

Manufacturer	Infineon Technologies
Termination	Through Hole
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Number of Terminations	3
ECCN Code	EAR99
Resistance	60mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-40A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
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Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
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Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	86ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	-40A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	17 ns
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	780 mJ
Recovery Time	260 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
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SKU: IRF9530NPBF-11

Manufacturer	Infineon Technologies
Number of Terminations	3
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Case Connection	DRAIN
Factory Lead Time	12 Weeks
Termination	Through Hole
ECCN Code	EAR99
Resistance	200mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-14A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	79W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Turn On Delay Time	15 ns
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Rds On (Max) @ Id, Vgs	200m Ω @ 8.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14A Tc
Gate Charge (Qg) (Max) @ Vgs	58nC @ 10V
Rise Time	58ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-14A
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	56A
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	250 mJ
Recovery Time	190 ns
Nominal Vgs	-4 V
Height	15.24mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: IRFR024NTRPBF-11

Manufacturer	Infineon Technologies
Termination	SMD/SMT
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Factory Lead Time	12 Weeks
ECCN Code	EAR99
Resistance	75mOhm
Voltage - Rated DC	55V
Terminal Form	GULL WING
Current Rating	17A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	45W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38W
Number of Terminations	2
Turn On Delay Time	4.9 ns
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	34ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	17A
Threshold Voltage	4V
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	55V
Recovery Time	83 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Rated 0 out of 5

In stock

SKU: FDB3632-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Operating Mode	ENHANCEMENT MODE
Part Status	Active
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	9MOhm
Voltage - Rated DC	100V
Terminal Form	GULL WING
Current Rating	44A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	8 Weeks
Turn-Off Delay Time	96 ns
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Height	5.08mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	30 ns
Lead Free	Lead Free

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SKU: FDS6675BZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Operating Mode	ENHANCEMENT MODE
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	21.8MOhm
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	FDS6675
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
JESD-609 Code	e4
Power Dissipation	2.5W
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	11A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2470pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	7.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn On Delay Time	3 ns
FET Type	P-Channel
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-2 V
Feedback Cap-Max (Crss)	500 pF
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor NDS0605

Rated 0 out of 5

In stock

SKU: NDS0605-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	360mW
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	5Ohm
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-180mA
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	360mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	8 Weeks
Continuous Drain Current (ID)	180mA
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	79pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 10V
Rise Time	6.3ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	20 ns
Threshold Voltage	-1.7V
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	5 ns
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	-60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-1.7 V
Feedback Cap-Max (Crss)	5 pF
Height	1.2mm
Length	2.92mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

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ON Semiconductor NDS9407

Rated 0 out of 5

In stock

SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

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ON Semiconductor NVR5198NLT1G

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