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| Manufacturer |
ON Semiconductor |
|---|---|
| Reach Compliance Code |
not_compliant |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
440V |
| Number of Elements |
1 |
| Test Conditions |
300V, 6.5A, 1k Ω |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2005 |
| Pbfree Code |
no |
| Part Status |
Obsolete |
| JESD-609 Code |
e0 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
VOLTAGE CLAMPING |
| Voltage - Rated DC |
410V |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
240 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Max Collector Current |
15A |
| Input Capacitance |
1nF |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
150W |
| Case Connection |
COLLECTOR |
| Input Type |
Logic |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.9V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Current Rating |
15A |
| Turn On Time |
6000 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 4V, 25A |
| Turn Off Time-Nom (toff) |
20500 ns |
| Current - Collector Pulsed (Icm) |
50A |
| Td (on/off) @ 25°C |
-/4μs |
| Gate-Emitter Voltage-Max |
22V |
| Gate-Emitter Thr Voltage-Max |
2.1V |
| REACH SVHC |
No SVHC |
| RoHS Status |
Non-RoHS Compliant |
| Pin Count |
3 |
| Lead Free |
Contains Lead |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.35kV |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
TrenchStop® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Collector Emitter Voltage (VCEO) |
1.35kV |
| Max Collector Current |
40A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
288W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Max Power Dissipation |
288W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1350V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
450 ns |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
-/235ns |
| Switching Energy |
950μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
8A |
| Number of Elements |
1 |
| SwitchingFrequency |
-30kHz |
| Test Conditions |
400V, 4A, 43 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2012 |
| Series |
TrenchStop™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
30W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Max Breakdown Voltage |
600V |
| Turn On Time |
18 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
75W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
6A |
| Reverse Recovery Time |
34 ns |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 4A |
| Turn Off Time-Nom (toff) |
216 ns |
| IGBT Type |
Trench |
| Gate Charge |
27nC |
| Current - Collector Pulsed (Icm) |
12A |
| Td (on/off) @ 25°C |
12ns/116ns |
| Switching Energy |
60μJ (on), 50μJ (off) |
| Height |
2.41mm |
| Length |
6.73mm |
| Width |
6.22mm |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
900V |
| Number of Elements |
1 |
| Test Conditions |
720V, 28A, 5 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Dual |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Current Rating |
51A |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
200W |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
204A |
| Turn On Delay Time |
29 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
26ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
51A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
| Turn Off Time-Nom (toff) |
370 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
29ns/110ns |
| Switching Energy |
190μJ (on), 1.06mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
220ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 33A, 5 Ω, 15V |
| Turn Off Delay Time |
845 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Current Rating |
57A |
| Element Configuration |
Single |
| Power Dissipation |
200W |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Max Junction Temperature (Tj) |
150°C |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
57A |
| Continuous Drain Current (ID) |
57A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
30V |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
3.6nF |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
| Continuous Collector Current |
57A |
| Turn Off Time-Nom (toff) |
2170 ns |
| Turn On Delay Time |
32 ns |
| Gate Charge |
167nC |
| Current - Collector Pulsed (Icm) |
114A |
| Td (on/off) @ 25°C |
32ns/845ns |
| Switching Energy |
1.8mJ (on), 19.6mJ (off) |
| Height |
24.99mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rise Time |
29ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-274AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 60A, 5 Ω, 15V |
| Turn Off Delay Time |
245 ns |
| Power Dissipation |
350W |
| Factory Lead Time |
13 Weeks |
| Published |
1999 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
350W |
| Current Rating |
85A |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Continuous Collector Current |
85A |
| Turn Off Time-Nom (toff) |
503 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
94ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
85A |
| Reverse Recovery Time |
82 ns |
| Turn On Time |
179 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
| Max Junction Temperature (Tj) |
150°C |
| Input Type |
Standard |
| Turn On Delay Time |
90 ns |
| Gate Charge |
340nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
90ns/245ns |
| Switching Energy |
3.26mJ (on), 2.27mJ (off) |
| Height |
24.8mm |
| Length |
16.1mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Obsolete |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
31ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2006 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 48A, 10 Ω, 15V |
| Turn Off Delay Time |
145 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
300V |
| Max Power Dissipation |
330W |
| Current Rating |
96A |
| Base Part Number |
IRGP4063D |
| Element Configuration |
Single |
| Power Dissipation |
330W |
| Case Connection |
COLLECTOR |
| Packaging |
Tube |
| Turn On Delay Time |
60 ns |
| Gate Charge |
95nC |
| Current - Collector Pulsed (Icm) |
144A |
| Drain to Source Voltage (Vdss) |
300V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.14V |
| Max Collector Current |
96A |
| Reverse Recovery Time |
115 ns |
| Continuous Drain Current (ID) |
96A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
100 ns |
| Vce(on) (Max) @ Vge, Ic |
2.14V @ 15V, 48A |
| Turn Off Time-Nom (toff) |
210 ns |
| IGBT Type |
Trench |
| Transistor Application |
POWER CONTROL |
| Rise Time |
56ns |
| Td (on/off) @ 25°C |
60ns/145ns |
| Switching Energy |
625μJ (on), 1.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
46ns |
| Height |
20.3mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
454W |
| Rise Time-Max |
90ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Delay Time |
200 ns |
| Turn On Delay Time |
50 ns |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
50ns/200ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
140A |
| Reverse Recovery Time |
155 ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
120 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench |
| Gate Charge |
150nC |
| Power - Max |
454W |
| Transistor Application |
POWER CONTROL |
| Switching Energy |
2.47mJ (on), 2.16mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.13mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 33A, 3.3 Ω, 15V |
| Turn Off Delay Time |
130 ns |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
14 Weeks |
| Published |
2004 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
390W |
| Current Rating |
75A |
| Element Configuration |
Single |
| Power Dissipation |
390W |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Gate Charge |
205nC |
| Current - Collector Pulsed (Icm) |
150A |
| Rise Time |
10ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.85V |
| Max Collector Current |
75A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
39 ns |
| Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
161 ns |
| IGBT Type |
NPT |
| Turn On Delay Time |
30 ns |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
30ns/130ns |
| Switching Energy |
255μJ (on), 375μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Fall Time-Max (tf) |
20ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 ns |
| Current Rating |
54A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
16ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Reverse Recovery Time |
30 ns |
| Turn On Time |
33 ns |
| Continuous Collector Current |
60A |
| Turn Off Time-Nom (toff) |
180 ns |
| Base Part Number |
HGTG12N60 |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
167W |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 3 Ω, 15V |
| Turn Off Delay Time |
73 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
70A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
290W |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Turn On Time |
28 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
70A |
| Reverse Recovery Time |
35 ns |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
160 ns |
| Base Part Number |
HGTG20N60 |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
15ns/73ns |
| Switching Energy |
105μJ (on), 150μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
290W |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 25 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
167W |
| Current Rating |
21A |
| Packaging |
Tube |
| Power Dissipation |
167W |
| Turn Off Time-Nom (toff) |
357 ns |
| IGBT Type |
NPT |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
21A |
| Reverse Recovery Time |
65 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
600V |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 5A |
| Continuous Collector Current |
21A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
22ns/160ns |
| Switching Energy |
450μJ (on), 390μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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