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| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
| Weight |
30mg |
| Transistor Element Material |
SILICON |
| Breakdown Voltage / V |
-25V |
| Max Power Dissipation |
350mW |
| Factory Lead Time |
24 Weeks |
| Packaging |
Tape & Reel (TR) |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
25V |
| Number of Elements |
1 |
| Terminal Position |
DUAL |
| Gate to Source Voltage (Vgs) |
-25V |
| FET Technology |
JUNCTION |
| Base Part Number |
MBFJ108 |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power Dissipation |
350mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Drain to Source Voltage (Vdss) |
25V |
| Continuous Drain Current (ID) |
80mA |
| Terminal Form |
GULL WING |
| Current Rating |
80mA |
| Max Junction Temperature (Tj) |
150°C |
| Drain to Source Resistance |
8Ohm |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
| Resistance - RDS(On) |
8Ohm |
| Height |
1.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
625 mW |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
500 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
4.5 V @ 1 µA |
| Voltage - Breakdown (V(BR)GSS) |
25 V |
| Resistance - RDS(On) |
3 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SOT-23-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Power - Max |
350 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
60 Ohms |
In stock
| Manufacturer |
Fairchild |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Mfr |
Fairchild Semiconductor |
| Package |
Bulk |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| FET Type |
N-Channel |
| Current - Drain (Idss) @ Vds (Vgs=0) |
30 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id |
1.7 V @ 1 nA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
3 mA |
| Gate-Source Cutoff Voltage |
2.5 V |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
350 mW |
| Transistor Polarity |
N-Channel |
| Vgs - Gate-Source Breakdown Voltage |
30 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
12 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSBF510 NPoS |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOT-23-3 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
20 mA |
| Gate-Source Cutoff Voltage |
– 2 V |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Technology |
Si |
| Configuration |
Single |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
TO-71-6 |
| Mounting Style |
Through Hole |
| Drain-Source Current at Vgs=0 |
6.5 mA |
| Gate-Source Cutoff Voltage |
6 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSK389 |
| Technology |
Si |
| Configuration |
Dual |
In stock
| Manufacturer |
Linearin |
|---|---|
| Package / Case |
SOIC-8 |
| Mounting Style |
SMD/SMT |
| Drain-Source Current at Vgs=0 |
12 mA |
| Gate-Source Cutoff Voltage |
6 mV |
| Id - Continuous Drain Current |
2 mA |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
400 mW |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
40 V |
| Vgs - Gate-Source Breakdown Voltage |
– 40 V |
| Series |
LSK389 |
| Configuration |
Dual |
In stock
| Manufacturer |
NEC |
|---|---|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
| Manufacturer Package Code |
PLSP0003ZD-A3 |
| Manufacturer Part Number |
2SK425-T1B-A |
| Package Description |
, |
| Part Life Cycle Code |
Obsolete |
| Part Package Code |
MM |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.83 |
| Rohs Code |
Yes |
| Pbfree Code |
Yes |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| Brand Name |
Renesas |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
TO-247-4 |
| Mounting Style |
Through Hole |
| Id - Continuous Drain Current |
28 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
155 W |
| Rds On - Drain-Source Resistance |
74 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Series |
UJ4C |
| Technology |
SiC |
| Configuration |
Single |
In stock
| Manufacturer |
Qorvo |
|---|---|
| Package / Case |
D2PAK-7L |
| Mounting Style |
SMD/SMT |
| Id - Continuous Drain Current |
72 A |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
259 W |
| Rds On - Drain-Source Resistance |
18 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
750 V |
| Technology |
SiC |
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