ON Semiconductor MMBFJ111

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Description

Specification

Processor

Manufacturer	ON Semiconductor
Published	2008
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Breakdown Voltage / V	-35V
Operating Temperature	-55°C~150°C TJ
Terminal Position	DUAL
Factory Lead Time	16 Weeks
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.21.00.95
Voltage - Rated DC	35V
Max Power Dissipation	350mW
Packaging	Tape & Reel (TR)
Terminal Form	GULL WING
Drain to Source Resistance	30Ohm
Feedback Cap-Max (Crss)	5 pF
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	350mW
FET Type	N-Channel
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	35V
Continuous Drain Current (ID)	20mA
Gate to Source Voltage (Vgs)	-35V
FET Technology	JUNCTION
Current Rating	20mA
Base Part Number	MBFJ111
Current - Drain (Idss) @ Vds (Vgs=0)	20mA @ 15V
Voltage - Cutoff (VGS off) @ Id	3V @ 1μA
Resistance - RDS(On)	30Ohm
Height	1.04mm
Length	2.9mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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