ON Semiconductor NGTB20N120IHWG

SKU: NGTB20N120IHWG-9

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Manufacturer Part :
NGTB20N120IHWG
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
RoHS Compliant
NGTB20N120IHWG Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 10 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

4 Weeks

Published

2014

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Max Power Dissipation

341W

Operating Temperature

-40°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

Trench Field Stop

Gate Charge

150nC

Power - Max

341W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.65V

Max Collector Current

40A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 20A

Turn Off Time-Nom (toff)

395 ns

Element Configuration

Single

Input Type

Standard

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

-/170ns

Switching Energy

480μJ (off)

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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