ON Semiconductor NGTB35N65FL2WG

SKU: NGTB35N65FL2WG-9

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Manufacturer Part :
NGTB35N65FL2WG
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
ROHS3 Compliant
NGTB35N65FL2WG Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Test Conditions

400V, 35A, 10 Ω, 15V

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Max Power Dissipation

300W

Factory Lead Time

21 Weeks

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2011

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector-Emitter Breakdown Voltage

650V

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

72ns/132ns

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

70A

Reverse Recovery Time

68 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

IGBT Type

Trench Field Stop

Gate Charge

125nC

Input Type

Standard

Power - Max

300W

Switching Energy

840μJ (on), 280μJ (off)

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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