ON Semiconductor NGTB40N120IHLWG

SKU: NGTB40N120IHLWG-9

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Manufacturer Part :
NGTB40N120IHLWG
Manufacturer :
ON Semiconductor
Package :
TO-247-3
RoHS :
RoHS Compliant
NGTB40N120IHLWG Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Power Dissipation

260W

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2006

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

260W

Pin Count

3

Element Configuration

Single

Mounting Type

Through Hole

Factory Lead Time

26 Weeks

Current - Collector Pulsed (Icm)

320A

Td (on/off) @ 25°C

-/360ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 40A

Turn Off Time-Nom (toff)

565 ns

IGBT Type

Trench Field Stop

Gate Charge

420nC

Input Type

Standard

Case Connection

COLLECTOR

Switching Energy

1.4mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

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