ON Semiconductor NGTG15N60S1EG

SKU: NGTG15N60S1EG-9

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Manufacturer Part :
NGTG15N60S1EG
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
NGTG15N60S1EG Datasheet :
NGTG15N60S1EG

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Operating Temperature

-55°C~150°C TJ

Contact Plating

Tin

Mounting Type

Through Hole

Package / Case

TO-220-3

Surface Mount

NO

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 15A, 22 Ω, 15V

Element Configuration

Single

Factory Lead Time

2 Weeks

Packaging

Tube

Published

2012

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

117W

Pin Count

3

Turn Off Delay Time

170 ns

Case Connection

COLLECTOR

Gate Charge

88nC

Current - Collector Pulsed (Icm)

120A

Power - Max

117W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

30A

JEDEC-95 Code

TO-220AB

Turn On Time

93 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 15A

Turn Off Time-Nom (toff)

440 ns

IGBT Type

NPT

Input Type

Standard

Turn On Delay Time

65 ns

Td (on/off) @ 25°C

65ns/170ns

Switching Energy

550μJ (on), 350μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

15.75mm

Length

10.28mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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