ON Semiconductor NTB30N06T4G

SKU: NTB30N06T4G-11

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Manufacturer Part :
NTB30N06T4G
Manufacturer :
ON Semiconductor
Package :
RoHS :
RoHS Compliant
NTB30N06T4G Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Part Status

Obsolete

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

27A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

88.2W Tc

Turn Off Delay Time

24 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Published

2005

Pin Count

3

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Voltage - Rated DC

60V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

27A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Surface Mount

Mount

Surface Mount

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Qualification Status

Not Qualified

Operating Mode

ENHANCEMENT MODE

Power Dissipation

88.2W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

42m Ω @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

Rise Time

36ns

Vgs (Max)

±20V

JESD-30 Code

R-PSSO-G2

Fall Time (Typ)

31 ns

Continuous Drain Current (ID)

27A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.042Ohm

Drain to Source Breakdown Voltage

60V

Pulsed Drain Current-Max (IDM)

80A

Avalanche Energy Rating (Eas)

101 mJ

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

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