ON Semiconductor NTD50N03R-1G

SKU: NTD50N03R-1G-11

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Manufacturer Part :
NTD50N03R-1G
Manufacturer :
ON Semiconductor
Package :
TO-251-3 Stub Leads, IPak
RoHS :
RoHS Compliant
NTD50N03R-1G Datasheet :
NTD50N03R-1G

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-251-3 Stub Leads, IPak

Number of Pins

4

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

7.8A Ta 45A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 11.5V

Number of Elements

1

Power Dissipation (Max)

1.5W Ta 50W Tc

Turn Off Delay Time

15 ns

Current Rating

45A

Mount

Through Hole

Published

2005

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated DC

25V

Peak Reflow Temperature (Cel)

260

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 12V

Gate Charge (Qg) (Max) @ Vgs

15nC @ 11.5V

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

50W

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

12m Ω @ 30A, 11.5V

Vgs(th) (Max) @ Id

2V @ 250μA

Pin Count

4

JESD-30 Code

R-PSIP-T3

Rise Time

84ns

Vgs (Max)

±20V

Fall Time (Typ)

4 ns

Continuous Drain Current (ID)

45A

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

7.8A

Drain to Source Breakdown Voltage

25V

Pulsed Drain Current-Max (IDM)

180A

Avalanche Energy Rating (Eas)

20 mJ

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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