ON Semiconductor NXH160T120L2Q2F2S1G

SKU: NXH160T120L2Q2F2S1G-9

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Manufacturer Part :
NXH160T120L2Q2F2S1G
Manufacturer :
ON Semiconductor
Package :
Module
RoHS :
NXH160T120L2Q2F2S1G Datasheet :
NXH160T120L2Q2F2S1G

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Description

Specification

Processor

Manufacturer

onsemi

Maximum DC Collector Current

181 A

Peak Forward Voltage

3.3 V

Package

Tray

Mounting

Screw Mount

Minimum Isolation Voltage

3000 Vrms

Mfr

onsemi

Maximum Gate Emitter Voltage

±20 V

Product Status

Active

Maximum Forward Current

132 A

Maximum Collector Emitter Voltage

1200 V

Maximum Collector Emitter Saturation Voltage

2.7@160A V

Maximum Collector Cut-off Current

500 uA

Brand

onsemi

Supplier Device Package

56-PIM/Q2PACK (93×47)

Package / Case

Module

Mounting Type

Chassis Mount

Operating Temperature

-40 to 150 °C

Current - Collector Cutoff (Max)

500 µA

Input Capacitance (Cies) @ Vce

38.8 nF @ 25 V

NTC Thermistor

Yes

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 160A

Channel Type

N

Current - Collector (Ic) (Max)

181 A

Voltage - Collector Emitter Breakdown (Max)

1200 V

Product Type

IGBT Modules

Supplier Package

Case 180AK

Input

Standard

Power - Max

500 W

Configuration

Three Level Inverter

Pin Count

56

Subcategory

IGBTs

Packaging

Tray

Product Category

IGBT Modules

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