ON Semiconductor SGP23N60UFDTU

SKU: SGP23N60UFDTU-9

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Manufacturer Part :
SGP23N60UFDTU
Manufacturer :
ON Semiconductor
Package :
TO-220-3
RoHS :
ROHS3 Compliant
SGP23N60UFDTU Datasheet :

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Description

Specification

Processor

Manufacturer

ON Semiconductor

Max Power Dissipation

100W

Mounting Type

Through Hole

Package / Case

TO-220-3

Weight

1.8g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

300V, 12A, 23 Ω, 15V

Packaging

Tube

JESD-609 Code

e3

Operating Temperature

-55°C~150°C TJ

Pbfree Code

yes

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Voltage - Rated DC

600V

Mount

Through Hole

Factory Lead Time

36 Weeks

JEDEC-95 Code

TO-220AB

Turn On Time

55 ns

Element Configuration

Single

Power Dissipation

100W

Input Type

Standard

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

23A

Reverse Recovery Time

42 ns

Base Part Number

SG*23N60

Current Rating

23A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 12A

Turn Off Time-Nom (toff)

320 ns

Gate Charge

49nC

Current - Collector Pulsed (Icm)

92A

Td (on/off) @ 25°C

17ns/60ns

Switching Energy

115μJ (on), 135μJ (off)

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

JESD-30 Code

R-PSFM-T3

Lead Free

Lead Free

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