onsemi AFGY120T65SPD

SKU: AFGY120T65SPD-9

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Manufacturer Part :
AFGY120T65SPD
Manufacturer :
onsemi
Package :
TO-247-3
RoHS :
AFGY120T65SPD Datasheet :
AFGY120T65SPD

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Description

Specification

Processor

Manufacturer

onsemi

Maximum Operating Temperature

+ 175 C

Supplier Device Package

TO-247-3

Base Product Number

AFGY120

Brand

onsemi

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

160 A

Factory Pack QuantityFactory Pack Quantity

30

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 120A, 5Ohm, 15V

Maximum Gate Emitter Voltage

±20V

Mfr

onsemi

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

MSL

MSL 1 – Unlimited

Package

Tube

Package Type

TO-247

Pd - Power Dissipation

714 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

Automotive, AEC-Q101

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

714W

Input Type

Standard

Power - Max

714 W

Product Type

IGBT Transistors

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 120A

Operating Temperature

-55°C ~ 175°C (TJ)

Continuous Collector Current

120A

IGBT Type

Trench Field Stop

Gate Charge

125 nC

Current - Collector Pulsed (Icm)

360 A

Td (on/off) @ 25°C

40ns/80ns

Switching Energy

6.6mJ (on), 3.8mJ (off)

Reverse Recovery Time (trr)

107 ns

Subcategory

IGBTs

Product Category

IGBT Transistors

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