onsemi FGH4L40T120LQD

SKU: FGH4L40T120LQD-9

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Manufacturer Part :
FGH4L40T120LQD
Manufacturer :
onsemi
Package :
TO-247-4
RoHS :
FGH4L40T120LQD Datasheet :
FGH4L40T120LQD

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Description

Specification

Processor

Manufacturer

onsemi

Maximum Gate Emitter Voltage

20V

Package / Case

TO-247-4

Supplier Device Package

TO-247-4L

Brand

onsemi

Collector- Emitter Voltage VCEO Max

1.2 kV

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

30

Product Status

Active

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

onsemi

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247

Pd - Power Dissipation

306 W

Maximum Collector Emitter Voltage

1200 V

Test Conditions

600V, 40A, 10Ohm, 15V

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 40A

Technology

Si

Configuration

Single

Power Dissipation

306W

Input Type

Standard

Power - Max

306 W

Product Type

IGBT Transistors

Operating Temperature

-55°C ~ 175°C (TJ)

Subcategory

IGBTs

Continuous Collector Current

80A

IGBT Type

Trench Field Stop

Gate Charge

227 nC

Current - Collector Pulsed (Icm)

160 A

Td (on/off) @ 25°C

42ns/218ns

Switching Energy

1.04mJ (on), 1.35mJ (off)

Reverse Recovery Time (trr)

59 ns

Product Category

IGBT Transistors

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