Panasonic Electronic Components MTM981400BBF

Compare

10 People watching this product now!

Pick up from the Woodmart Store

To pick up today

Free

Courier delivery

Our courier will deliver to the specified address

2-3 Days

Free

DHL Courier delivery

DHL courier will deliver to the specified address

2-3 Days

Free

Warranty 1 year

More details

Free 30-Day returns

More details

Payment Methods:

Description

Specification

Processor

Manufacturer	Panasonic Electronic Components
Operating Temperature	150°C TJ
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	7A Ta
Drive Voltage (Max Rds On, Min Rds On)	4.5V 10V
Number of Elements	1
Power Dissipation (Max)	2W Ta
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Turn Off Delay Time	230 ns
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e6
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
Terminal Position	DUAL
Mount	Surface Mount
Factory Lead Time	10 Weeks
Drain to Source Voltage (Vdss)	40V
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Operating Mode	DEPLETION MODE
Power Dissipation	2W
Turn On Delay Time	18 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	7A
Reach Compliance Code	unknown
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	7A
Drain-source On Resistance-Max	0.025Ohm
Drain to Source Breakdown Voltage	-40V
Height	950μm
Length	5mm
Width	5mm
REACH SVHC	No SVHC
Element Configuration	Single
RoHS Status	RoHS Compliant

Customer Reviews

Rated 0 out of 5

0 reviews

Rated 5 out of 5

0

Rated 4 out of 5

0

Rated 3 out of 5

0

Rated 2 out of 5

0

Rated 1 out of 5

0

Reviews

Clear filters

There are no reviews yet.

Be the first to review “Panasonic Electronic Components MTM981400BBF”

Your email address will not be published. Required fields are marked *

Your rating *

Value for money

1 2 3 4 5

Durability

1 2 3 4 5

Delivery speed

1 2 3 4 5

Your review *

Pros

Cons

Name *

Email *

Related Products

Diodes Incorporated DMG1012T-7 Real Image

Compare

Quick view

Diodes Incorporated DMG1012T-7

Rated 0 out of 5

In stock

SKU: DMG1012T-7-11

Manufacturer	Diodes Incorporated
Part Status	Active
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
FET Type	N-Channel
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	400MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	280mW Ta
Element Configuration	Single
Power Dissipation	280mW
Turn On Delay Time	5.1 ns
Published	2012
Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	6V
Current - Continuous Drain (Id) @ 25°C	630mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 4.5V
Rise Time	7.4ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	12.3 ns
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	630mA
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Drain to Source Breakdown Voltage	20V
Input Capacitance	60.67pF
Drain to Source Resistance	300mOhm
Rds On Max	400 mΩ
Height	800μm
Length	1.7mm
Width	850μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Infineon Technologies IRF5210PBF Real Image

Compare

Quick view

Infineon Technologies IRF5210PBF

Rated 0 out of 5

In stock

SKU: IRF5210PBF-11

Manufacturer	Infineon Technologies
Termination	Through Hole
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1998
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Case Connection	DRAIN
Number of Terminations	3
ECCN Code	EAR99
Resistance	60mOhm
Voltage - Rated DC	-100V
Peak Reflow Temperature (Cel)	250
Current Rating	-40A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	86ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	81 ns
Turn-Off Delay Time	79 ns
Continuous Drain Current (ID)	-40A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Turn On Delay Time	17 ns
Drain to Source Breakdown Voltage	-100V
Dual Supply Voltage	-100V
Avalanche Energy Rating (Eas)	780 mJ
Recovery Time	260 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	-4 V
Height	19.8mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

Infineon Technologies IRF9Z34NPBF Real Image

Compare

Quick view

Infineon Technologies IRF9Z34NPBF

Rated 0 out of 5

In stock

SKU: IRF9Z34NPBF-11

Manufacturer	Infineon Technologies
Case Connection	DRAIN
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Number of Terminations	3
Termination	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	100mOhm
Voltage - Rated DC	-55V
Peak Reflow Temperature (Cel)	250
Current Rating	-19A
Time@Peak Reflow Temperature-Max (s)	30
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	68W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	56W
Contact Plating	Tin
Factory Lead Time	12 Weeks
Threshold Voltage	-4V
JEDEC-95 Code	TO-220AB
Rds On (Max) @ Id, Vgs	100m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	19A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	55ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	41 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	-19A
FET Type	P-Channel
Turn On Delay Time	13 ns
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-55V
Pulsed Drain Current-Max (IDM)	68A
Dual Supply Voltage	-55V
Recovery Time	82 ns
Nominal Vgs	-4 V
Height	8.77mm
Length	10.5156mm
Width	4.69mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Transistor Application	SWITCHING
Lead Free	Lead Free

Infineon Technologies IRFR220NTRPBF Real Image

Compare

Quick view

Infineon Technologies IRFR220NTRPBF

Rated 0 out of 5

In stock

SKU: IRFR220NTRPBF-11

Manufacturer	Infineon Technologies
Turn On Delay Time	6.4 ns
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	600MOhm
Termination	SMD/SMT
Voltage - Rated DC	200V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	5A
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	43W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	43W
Case Connection	DRAIN
Contact Plating	Tin
Factory Lead Time	12 Weeks
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	200V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	5A
Threshold Voltage	4V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Transistor Application	SWITCHING
FET Type	N-Channel
Pulsed Drain Current-Max (IDM)	20A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	46 mJ
Recovery Time	140 ns
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
Switching Current	5A
Height	2.52mm
Length	6.7056mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Rds On (Max) @ Id, Vgs	600m Ω @ 2.9A, 10V
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDB33N25TM

Rated 0 out of 5

In stock

SKU: FDB33N25TM-11

Manufacturer	ON Semiconductor
Power Dissipation	235W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	94MOhm
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
Case Connection	DRAIN
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDC610PZ

Rated 0 out of 5

In stock

SKU: FDC610PZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Power Dissipation	1.6W
Factory Lead Time	13 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
JESD-609 Code	e3
Turn On Delay Time	7 ns
Continuous Drain Current (ID)	4.9mA
Threshold Voltage	-2.2V
Rds On (Max) @ Id, Vgs	42m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1005pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	33 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	4.9A
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDI2532

Rated 0 out of 5

In stock

SKU: FDI2532-11

Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	310W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5870pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta 79A Tc
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V

Compare

Quick view

ON Semiconductor FDS6675BZ

Rated 0 out of 5

In stock

SKU: FDS6675BZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Operating Mode	ENHANCEMENT MODE
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	21.8MOhm
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	FDS6675
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
JESD-609 Code	e4
Power Dissipation	2.5W
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	11A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2470pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	7.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn On Delay Time	3 ns
FET Type	P-Channel
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-2 V
Feedback Cap-Max (Crss)	500 pF
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDS6690A

Rated 0 out of 5

In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Compare

Quick view

ON Semiconductor FDV304P

Rated 0 out of 5

In stock

SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

ON Semiconductor NVR5198NLT1G Real Image

Compare

Quick view

ON Semiconductor NVR5198NLT1G

Rated 0 out of 5

In stock

SKU: NVR5198NLT1G-11

Manufacturer	ON Semiconductor
JESD-609 Code	e3
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Power Dissipation	1.5W
Factory Lead Time	4 Weeks
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Pin Count	3
Number of Channels	1
Power Dissipation-Max	900mW Ta
Element Configuration	Single
Published	2007
Turn On Delay Time	5 ns
Vgs (Max)	±20V
Fall Time (Typ)	2 ns
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	182pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Gate Charge (Qg) (Max) @ Vgs	5.1nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155m Ω @ 1A, 10V
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

Renesas Electronics America RJK5015DPK-00#T0 Real Image

Compare

Quick view

Renesas Electronics America RJK5015DPK-00#T0

Rated 0 out of 5

In stock