Renesas Electronics America Inc RBN25H125S1FPQ-A0#CB0

SKU: RBN25H125S1FPQ-A0#CB0-9

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Manufacturer Part :
RBN25H125S1FPQ-A0#CB0
Manufacturer :
Renesas Electronics America Inc
Package :
TO-247-3
RoHS :
RBN25H125S1FPQ-A0#CB0 Datasheet :
RBN25H125S1FPQ-A0#CB0

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Description

Specification

Processor

Manufacturer

Renesas Electronics

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247A

Brand

Renesas Electronics

Collector- Emitter Voltage VCEO Max

1.25 kV

Continuous Collector Current Ic Max

25 A

Current-Collector (Ic) (Max)

50 A

Factory Pack QuantityFactory Pack Quantity

25

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Maximum Operating Temperature

+ 175 C

Mounting Styles

Through Hole

Pd - Power Dissipation

223 W

Product Status

Active

Test Conditions

600V, 25A, 10Ohm, 15V

Operating Temperature

175°C (TJ)

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

223

Input Type

Standard

Power - Max

223 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

1250 V

Vce(on) (Max) @ Vge, Ic

2.34V @ 15V, 25A

Continuous Collector Current

50

IGBT Type

Trench

Gate Charge

56 nC

Td (on/off) @ 25°C

19ns/109ns

Switching Energy

1.1mJ (on), 800μJ (off)

Reverse Recovery Time (trr)

102 ns

Product Category

IGBT Transistors

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