Renesas Electronics America Inc RBN50H65T1FPQ-A0#CB0

SKU: RBN50H65T1FPQ-A0#CB0-9

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Manufacturer Part :
RBN50H65T1FPQ-A0#CB0
Manufacturer :
Renesas Electronics America Inc
Package :
TO-247-3
RoHS :
RBN50H65T1FPQ-A0#CB0 Datasheet :
RBN50H65T1FPQ-A0#CB0

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Description

Specification

Processor

Manufacturer

Renesas Electronics

Factory Pack QuantityFactory Pack Quantity

25

Test Conditions

400V, 50A, 16Ohm, 15V

Product Status

Active

Pd - Power Dissipation

250 W

Package

Tube

Mounting Styles

Through Hole

Maximum Operating Temperature

+ 175 C

Operating Temperature

175°C (TJ)

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Current-Collector (Ic) (Max)

100 A

Continuous Collector Current Ic Max

50 A

Collector- Emitter Voltage VCEO Max

650 V

Brand

Renesas Electronics

Supplier Device Package

TO-247A

Package / Case

TO-247-3

Mounting Type

Through Hole

Subcategory

IGBTs

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Reverse Recovery Time (trr)

65 ns

Switching Energy

830μJ (on), 670μJ (off)

Td (on/off) @ 25°C

20ns/93ns

Gate Charge

36 nC

IGBT Type

Trench

Continuous Collector Current

100

Voltage - Collector Emitter Breakdown (Max)

650 V

Packaging

Tube

Product Type

IGBT Transistors

Power - Max

250 W

Input Type

Standard

Power Dissipation

250

Configuration

Single

Technology

Si

Product Category

IGBT Transistors

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