ROHM Semiconductor RCD080N25TL

SKU: RCD080N25TL-11

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Manufacturer Part :
RCD080N25TL
Manufacturer :
ROHM Semiconductor
Package :
RoHS :
ROHS3 Compliant
RCD080N25TL Datasheet :

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

8A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

850mW Ta 20W Tc

Turn Off Delay Time

40 ns

JESD-30 Code

R-PSSO-G2

Operating Temperature

150°C TJ

Published

2013

JESD-609 Code

e2

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin/Copper (Sn98Cu2)

Terminal Form

GULL WING

Pin Count

3

Mount

Surface Mount

Factory Lead Time

10 Weeks

Vgs (Max)

±30V

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

30 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

300m Ω @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds

1440pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Rise Time

40ns

Fall Time (Typ)

15 ns

Continuous Drain Current (ID)

8A

Element Configuration

Single

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

8A

Drain to Source Breakdown Voltage

250V

Avalanche Energy Rating (Eas)

4.67 mJ

Height

2.5mm

Length

6.7mm

Width

5.8mm

Radiation Hardening

No

Power Dissipation

20W

RoHS Status

ROHS3 Compliant

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