Rohm Semiconductor RGS30TSX2DGC11

SKU: RGS30TSX2DGC11-9

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Manufacturer Part :
RGS30TSX2DGC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGS30TSX2DGC11 Datasheet :
RGS30TSX2DGC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Test Conditions

600V, 15A, 10Ohm, 15V

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

1.2 kV

Continuous Collector Current Ic Max

30 A

Current-Collector (Ic) (Max)

30 A

Factory Pack QuantityFactory Pack Quantity

30

Maximum Gate Emitter Voltage

±30V

Maximum Operating Temperature

+ 175 C

Maximum Collector Emitter Voltage

1200 V

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247N

Pd - Power Dissipation

267 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

267W

Input Type

Standard

Power - Max

267 W

Product Type

IGBT Transistors

Packaging

Tube

Operating Temperature

-40°C ~ 175°C (TJ)

Continuous Collector Current

30A

IGBT Type

Trench Field Stop

Gate Charge

41 nC

Current - Collector Pulsed (Icm)

45 A

Td (on/off) @ 25°C

30ns/70ns

Switching Energy

740μJ (on), 600μJ (off)

Reverse Recovery Time (trr)

157 ns

Subcategory

IGBTs

Product Category

IGBT Transistors

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