Rohm Semiconductor RGS80TS65DHRC11

SKU: RGS80TS65DHRC11-9

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Manufacturer Part :
RGS80TS65DHRC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGS80TS65DHRC11 Datasheet :
RGS80TS65DHRC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Mfr

Rohm Semiconductor

Package / Case

TO-247-3

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

73 A

Factory Pack QuantityFactory Pack Quantity

450

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Qualification

AEC-Q101

Mounting Type

Through Hole

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

MSL

MSL 1 – Unlimited

Package

Tube

Part # Aliases

RGS80TS65DHR

Pd - Power Dissipation

272 W

Product Status

Active

Maximum Operating Temperature

+ 175 C

Test Conditions

400V, 40A, 10Ohm, 15V

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

272

Input Type

Standard

Power - Max

272 W

Product Type

IGBT Transistors

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Continuous Collector Current

73

IGBT Type

Trench Field Stop

Gate Charge

48 nC

Current - Collector Pulsed (Icm)

120 A

Td (on/off) @ 25°C

37ns/112ns

Switching Energy

1.05mJ (on), 1.03mJ (off)

Reverse Recovery Time (trr)

103 ns

Product Category

IGBT Transistors

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