Rohm Semiconductor RGSX5TS65EGC11

SKU: RGSX5TS65EGC11-9

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Manufacturer Part :
RGSX5TS65EGC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGSX5TS65EGC11 Datasheet :
RGSX5TS65EGC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Operating Temperature

-40°C ~ 175°C (TJ)

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

114 A

Factory Pack QuantityFactory Pack Quantity

30

Maximum Collector Emitter Voltage

650 V

Maximum Operating Temperature

+ 175 C

Mfr

Rohm Semiconductor

Maximum Gate Emitter Voltage

±30V

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247N

Pd - Power Dissipation

404 W

Product Status

Active

Test Conditions

400V, 75A, 10Ohm, 15V

Package / Case

TO-247-3

Mounting Type

Through Hole

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2.15V @ 15V, 75A

Pin Count

3

Configuration

Single

Power Dissipation

404W

Input Type

Standard

Power - Max

404 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Subcategory

IGBTs

Packaging

Tube

Continuous Collector Current

114A

IGBT Type

Trench Field Stop

Gate Charge

79 nC

Current - Collector Pulsed (Icm)

225 A

Td (on/off) @ 25°C

43ns/113ns

Switching Energy

3.44mJ (on), 1.9mJ (off)

Reverse Recovery Time (trr)

116 ns

Technology

Si

Product Category

IGBT Transistors

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