ROHM Semiconductor RGT30NS65DGTL

SKU: RGT30NS65DGTL-9

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Manufacturer Part :
RGT30NS65DGTL
Manufacturer :
ROHM Semiconductor
Package :
RoHS :
ROHS3 Compliant
RGT30NS65DGTL Datasheet :
RGT30NS65DGTL

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

1.946308g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 15A, 10 Ω, 15V

Turn Off Delay Time

64 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

17 Weeks

Published

2014

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Max Power Dissipation

133W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Operating Temperature

-40°C~175°C TJ

JESD-30 Code

R-PSSO-G2

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 15A

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

18 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

30A

Reverse Recovery Time

55 ns

Max Breakdown Voltage

650V

Element Configuration

Single

Power Dissipation

133W

Max Junction Temperature (Tj)

175°C

Continuous Collector Current

30A

Turn Off Time-Nom (toff)

204 ns

IGBT Type

Trench Field Stop

Gate Charge

32nC

Current - Collector Pulsed (Icm)

45A

Td (on/off) @ 25°C

18ns/64ns

Height

5mm

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

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