Rohm Semiconductor RGTV80TK65DGVC11

SKU: RGTV80TK65DGVC11-9

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Manufacturer Part :
RGTV80TK65DGVC11
Manufacturer :
Rohm Semiconductor
Package :
TO-3PFM, SC-93-3
RoHS :
RGTV80TK65DGVC11 Datasheet :
RGTV80TK65DGVC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Operating Temperature

-40°C ~ 175°C (TJ)

Supplier Device Package

TO-3PFM

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

39 A

Factory Pack QuantityFactory Pack Quantity

30

Maximum Collector Emitter Voltage

650 V

Maximum Operating Temperature

+ 175 C

Mfr

Rohm Semiconductor

Maximum Gate Emitter Voltage

±30V

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-3PFM

Pd - Power Dissipation

85 W

Product Status

Active

Test Conditions

400V, 40A, 10Ohm, 15V

Package / Case

TO-3PFM, SC-93-3

Mounting Type

Through Hole

Channel Type

N

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 40A

Pin Count

3

Configuration

Single

Power Dissipation

85W

Input Type

Standard

Power - Max

85 W

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Subcategory

IGBTs

Packaging

Tube

Continuous Collector Current

39A

IGBT Type

Trench Field Stop

Gate Charge

81 nC

Current - Collector Pulsed (Icm)

160 A

Td (on/off) @ 25°C

39ns/113ns

Switching Energy

1.02mJ (on), 710μJ (off)

Reverse Recovery Time (trr)

101 ns

Technology

Si

Product Category

IGBT Transistors

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