Rohm Semiconductor RGTV80TS65GC11

SKU: RGTV80TS65GC11-9

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Manufacturer Part :
RGTV80TS65GC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
-
RGTV80TS65GC11 Datasheet :
RGTV80TS65GC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Package / Case

TO-247-3

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

40 A

Current-Collector (Ic) (Max)

78 A

Product Status

Active

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

MSL

MSL 1 – Unlimited

Package

Tube

Pd - Power Dissipation

234 W

Factory Pack QuantityFactory Pack Quantity

30

Test Conditions

400V, 40A, 10Ohm, 15V

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

234W

Input Type

Standard

Power - Max

234 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 40A

Continuous Collector Current

78A

IGBT Type

Trench Field Stop

Gate Charge

81 nC

Current - Collector Pulsed (Icm)

160 A

Td (on/off) @ 25°C

39ns/113ns

Switching Energy

1.02mJ (on), 710μJ (off)

Product Category

IGBT Transistors

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