Rohm Semiconductor RGW40TK65DGVC11

SKU: RGW40TK65DGVC11-9

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Manufacturer Part :
RGW40TK65DGVC11
Manufacturer :
Rohm Semiconductor
Package :
TO-3PFM, SC-93-3
RoHS :
RGW40TK65DGVC11 Datasheet :
RGW40TK65DGVC11

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Description

Specification

Processor

Manufacturer

+ 175 C

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Surface Mount

TO-3PFM

Transistor Element Material

Through Hole

Base Product Number

ROHM Semiconductor

Brand

ROHM Semiconductor

Maximum Operating Temperature

Rohm Semiconductor

Mfr

– 40 C

Minimum Operating Temperature

Tube

Package Type

Active

Qualification

Details

Operating Temperature

Tube

Additional Feature

IGBTs

Subcategory

Si

Number of Elements

Single

Power Dissipation

Standard

Input Type

61 W

Polarity/Channel Type

IGBT Transistors

JEDEC-95 Code

650 V

Voltage - Collector Emitter Breakdown (Max)

27 A

Power Dissipation-Max (Abs)

400V, 20A, 10Ohm, 15V

Test Condition

1.9V @ 15V, 20A

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

59 nC

Gate Charge

80 A

Current - Collector Pulsed (Icm)

33ns/76ns

Gate-Emitter Thr Voltage-Max

92 ns

Reverse Recovery Time (trr)

IGBT Transistors

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