Rohm Semiconductor RGW40TS65GC11

SKU: RGW40TS65GC11-9

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Manufacturer Part :
RGW40TS65GC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGW40TS65GC11 Datasheet :
RGW40TS65GC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-3

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector Current (DC)

20(A)

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

20 A

Current-Collector (Ic) (Max)

40 A

Factory Pack QuantityFactory Pack Quantity

30

Product Status

Active

Mounting Type

Through Hole

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting

Through Hole

Mounting Styles

Through Hole

MSL

MSL 1 – Unlimited

Package

Tube

Package Type

TO-247N

Pd - Power Dissipation

136 W

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Rad Hardened

No

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Pin Count

3 +Tab

Configuration

Single

Power Dissipation

136W

Input Type

Standard

Power - Max

136 W

Test Conditions

400V, 20A, 10Ohm, 15V

Operating Temperature

-40°C ~ 175°C (TJ)

Channel Type

N

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 20A

Continuous Collector Current

40A

IGBT Type

Trench Field Stop

Gate Charge

59 nC

Current - Collector Pulsed (Icm)

80 A

Td (on/off) @ 25°C

33ns/76ns

Switching Energy

330μJ (on), 300μJ (off)

Product Category

IGBT Transistors

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