Rohm Semiconductor RGW80TS65CHRC11

SKU: RGW80TS65CHRC11-9

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Manufacturer Part :
RGW80TS65CHRC11
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGW80TS65CHRC11 Datasheet :
RGW80TS65CHRC11

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-3

Supplier Device Package

TO-247N

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

81 A

Factory Pack QuantityFactory Pack Quantity

30

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 20A, 10Ohm, 15V

Mounting Type

Through Hole

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247N

Pd - Power Dissipation

214 W

Product Status

Active

Maximum Gate Emitter Voltage

±30V

Operating Temperature

-40°C ~ 175°C (TJ)

Voltage - Collector Emitter Breakdown (Max)

650 V

Channel Type

N

Technology

SiC

Pin Count

3

Configuration

Single

Power Dissipation

214W

Input Type

Standard

Power - Max

214 W

Product Type

IGBT Transistors

Packaging

Tube

Subcategory

IGBTs

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 40A

Continuous Collector Current

81A

Gate Charge

110 nC

Current - Collector Pulsed (Icm)

160 A

Td (on/off) @ 25°C

43ns/145ns

Switching Energy

120μJ (on), 340μJ (off)

Reverse Recovery Time (trr)

33 ns

Product Category

IGBT Transistors

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