Rohm Semiconductor RGWS80TS65DGC13

SKU: RGWS80TS65DGC13-9

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Manufacturer Part :
RGWS80TS65DGC13
Manufacturer :
Rohm Semiconductor
Package :
-
RoHS :
RGWS80TS65DGC13 Datasheet :
RGWS80TS65DGC13

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Description

Specification

Processor

Manufacturer

+ 175 C

Factory Lead Time

Through Hole

Mounting Type

TO-247-3

Surface Mount

TO-247G

Transistor Element Material

Through Hole

Base Product Number

ROHM Semiconductor

Gate to Emitter Voltage (Max)

ROHM Semiconductor

Maximum Operating Temperature

Rohm Semiconductor

Mfr

– 40 C

Operating Temperature Classification

Tube

Package Shape

TO-247GE

Package Type

Active

Rad Hardened

Details

Tradename

-40°C ~ 175°C (TJ)

Operating Temperature

Tube

ECCN Code

IGBTs

Subcategory

Si

Case Connection

Standard

Input Type

202 W

Polarity/Channel Type

IGBT Transistors

JEDEC-95 Code

650 V

Voltage - Collector Emitter Breakdown (Max)

71 A

Channel Type

400V, 40A, 10Ohm, 15V

Test Condition

2V @ 15V, 40A

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

83 nC

Gate Charge

120 A

Current - Collector Pulsed (Icm)

40ns/114ns

Td (on/off) @ 25°C

700μJ (on), 660μJ (off)

Switching Energy

88 ns

Reverse Recovery Time (trr)

IGBT Transistors

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