Rohm Semiconductor RGWS80TS65GC13

SKU: RGWS80TS65GC13-9

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Manufacturer Part :
RGWS80TS65GC13
Manufacturer :
Rohm Semiconductor
Package :
TO-247-3
RoHS :
RGWS80TS65GC13 Datasheet :
RGWS80TS65GC13

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Description

Specification

Processor

Manufacturer

ROHM Semiconductor

Maximum Gate Emitter Voltage

– 30 V, + 30 V

Supplier Device Package

TO-247G

Brand

ROHM Semiconductor

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

43 A

Current-Collector (Ic) (Max)

71 A

Factory Pack QuantityFactory Pack Quantity

600

Product Status

Active

Maximum Collector Emitter Voltage

650 V

Maximum Operating Temperature

+ 175 C

Mfr

Rohm Semiconductor

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247GE

Pd - Power Dissipation

202 W

Package / Case

TO-247-3

Mounting Type

Through Hole

Product Type

IGBT Transistors

Operating Temperature

-40°C ~ 175°C (TJ)

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

202W

Input Type

Standard

Power - Max

202 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Test Conditions

400V, 40A, 10Ohm, 15V

Continuous Collector Current

71A

IGBT Type

Trench Field Stop

Gate Charge

83 nC

Current - Collector Pulsed (Icm)

120 A

Td (on/off) @ 25°C

40ns/114ns

Switching Energy

700μJ (on), 660μJ (off)

Packaging

Tube

Product Category

IGBT Transistors

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