STMicroelectronics STB6NK60ZT4

SKU: STB6NK60ZT4-11

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Manufacturer Part :
STB6NK60ZT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STB6NK60ZT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

6A Tc

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

1

Power Dissipation (Max)

110W Tc

Turn Off Delay Time

47 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Pin Count

3

Mount

Surface Mount

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Voltage - Rated DC

600V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

6A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STB6N

Series

SuperMESH™

JESD-30 Code

R-PSSO-G2

Fall Time (Typ)

19 ns

Continuous Drain Current (ID)

6A

Power Dissipation

110W

Turn On Delay Time

14 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

1.2 Ω @ 3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100μA

Input Capacitance (Ciss) (Max) @ Vds

905pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Rise Time

14ns

Vgs (Max)

±30V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Threshold Voltage

3.75V

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

6A

Drain to Source Breakdown Voltage

600V

Pulsed Drain Current-Max (IDM)

24A

Height

4.6mm

Length

10.75mm

Width

10.4mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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