STMicroelectronics STD25NF10LT4

SKU: STD25NF10LT4-11

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Manufacturer Part :
STD25NF10LT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STD25NF10LT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

4.535924g

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

25A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

100W Tc

Turn Off Delay Time

58 ns

Operating Temperature

-55°C~175°C TJ

Packaging

Cut Tape (CT)

JESD-30 Code

R-PSSO-G2

Contact Plating

Tin

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

35mOhm

Additional Feature

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC

100V

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

25A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STD25N

Pin Count

3

Series

STripFET™ II

Number of Channels

1

Vgs (Max)

±16V

Fall Time (Typ)

20 ns

Current

17A

Operating Mode

ENHANCEMENT MODE

Power Dissipation

100W

Case Connection

DRAIN

Turn On Delay Time

20 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

35m Ω @ 12.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1710pF @ 25V

Gate Charge (Qg) (Max) @ Vgs

52nC @ 5V

Rise Time

40ns

Voltage

100V

Element Configuration

Single

Continuous Drain Current (ID)

25A

Threshold Voltage

2.5V

Gate to Source Voltage (Vgs)

16V

Drain to Source Breakdown Voltage

100V

Avalanche Energy Rating (Eas)

450 mJ

Max Junction Temperature (Tj)

175°C

Nominal Vgs

2.5 V

Height

2.63mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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