STMicroelectronics STGB10NC60KDT4

SKU: STGB10NC60KDT4-9

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Manufacturer Part :
STGB10NC60KDT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB10NC60KDT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

2.240009g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Turn Off Delay Time

72 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Factory Lead Time

8 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

65W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

10A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STGB10

Pin Count

3

Series

PowerMESH™

Element Configuration

Single

Turn On Time

23 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 5A

Input Type

Standard

Turn On Delay Time

17 ns

Power - Max

65W

Transistor Application

POWER CONTROL

Rise Time

6ns

Drain to Source Voltage (Vdss)

600V

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

20A

Reverse Recovery Time

22 ns

Continuous Drain Current (ID)

10A

Max Breakdown Voltage

600V

Power Dissipation

60W

Case Connection

ISOLATED

Turn Off Time-Nom (toff)

242 ns

Gate Charge

19nC

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

17ns/72ns

Switching Energy

55μJ (on), 85μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Height

4.6mm

Length

10.4mm

Width

9.35mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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