STMicroelectronics STGB12NB60KDT4

SKU: STGB12NB60KDT4-9

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Manufacturer Part :
STGB12NB60KDT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB12NB60KDT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Obsolete

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

30

Mount

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

125W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Reach Compliance Code

not_compliant

Current Rating

18A

JESD-609 Code

e3

Base Part Number

STGB12

Reverse Recovery Time

80 ns

Max Breakdown Voltage

600V

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

125W

Input Type

Standard

Transistor Application

MOTOR CONTROL

Rise Time

14.5ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

30A

Pin Count

3

JESD-30 Code

R-PSSO-G2

Turn On Time

39.5 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 12A

Turn Off Time-Nom (toff)

461 ns

Gate Charge

54nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/96ns

Switching Energy

258μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead

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