STMicroelectronics STGB18N40LZT4

SKU: STGB18N40LZT4-9

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Manufacturer Part :
STGB18N40LZT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB18N40LZT4 Datasheet :
STGB18N40LZT4

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-30 Code

R-PSSO-G2

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

420V

Number of Elements

1

Test Conditions

300V, 10A, 5V

Turn Off Delay Time

13.5 μs

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Operating Temperature

-55°C~175°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

VOLTAGE CLAMPING

Max Power Dissipation

150W

Terminal Form

GULL WING

Base Part Number

STGB18

Pin Count

4

Contact Plating

Tin

Factory Lead Time

8 Weeks

Turn Off Time-Nom (toff)

22200 ns

Gate Charge

29nC

Turn On Delay Time

650 ns

Power - Max

150W

Transistor Application

AUTOMOTIVE IGNITION

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

360V

Max Collector Current

30A

Max Breakdown Voltage

420V

Turn On Time

4450 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 4.5V, 10A

Case Connection

COLLECTOR

Element Configuration

Single

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

650ns/13.5μs

Gate-Emitter Voltage-Max

16V

Height

4.6mm

Length

10.4mm

Width

9.35mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Logic

Lead Free

Lead Free

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