STMicroelectronics STGB19NC60KDT4

SKU: STGB19NC60KDT4-9

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Manufacturer Part :
STGB19NC60KDT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB19NC60KDT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Pin Count

4

Operating Temperature

-55°C~150°C TJ

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Max Power Dissipation

125W

Terminal Form

GULL WING

Base Part Number

STGB19

Contact Plating

Tin

Factory Lead Time

8 Weeks

Turn On Time

38 ns

Element Configuration

Single

Power - Max

125W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

35A

Reverse Recovery Time

31 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Turn Off Time-Nom (toff)

270 ns

JESD-30 Code

R-PSSO-G2

Gate Charge

55nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

30ns/105ns

Switching Energy

165μJ (on), 255μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

Input Type

Standard

RoHS Status

ROHS3 Compliant

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