STMicroelectronics STGB19NC60KT4

SKU: STGB19NC60KT4-9

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Manufacturer Part :
STGB19NC60KT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB19NC60KT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Series

PowerMESH™

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Turn Off Delay Time

125 ns

Operating Temperature

-55°C~150°C TJ

Base Part Number

STGB19

Mount

Surface Mount

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn) – annealed

Max Power Dissipation

125W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Time@Peak Reflow Temperature-Max (s)

30

Packaging

Tape & Reel (TR)

Pin Count

4

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Power Dissipation

125W

Input Type

Standard

Turn On Delay Time

30 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

35A

Max Breakdown Voltage

600V

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Turn Off Time-Nom (toff)

270 ns

Gate Charge

55nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

30ns/105ns

Switching Energy

165μJ (on), 255μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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