STMicroelectronics STGB20H60DF

SKU: STGB20H60DF-9

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Manufacturer Part :
STGB20H60DF
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB20H60DF Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

20 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

167W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGB20

Packaging

Cut Tape (CT)

Input Type

Standard

Gate Charge

115nC

Current - Collector Pulsed (Icm)

80A

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

90 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

IGBT Type

Trench Field Stop

Power - Max

167W

Polarity/Channel Type

N-CHANNEL

Td (on/off) @ 25°C

42.5ns/177ns

Switching Energy

209μJ (on), 261μJ (off)

Gate-Emitter Voltage-Max

20V

Height

4.6mm

Length

10.4mm

Width

9.35mm

RoHS Status

ROHS3 Compliant

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