STMicroelectronics STGB20NB37LZ

SKU: STGB20NB37LZ-9

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Manufacturer Part :
STGB20NB37LZ
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB20NB37LZ Datasheet :
STGB20NB37LZ

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Peak Reflow Temperature (Cel)

245

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

425V

Number of Elements

1

Test Conditions

250V, 20A, 1k Ω, 4.5V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Series

PowerMESH™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

ESD PROTECTED

Max Power Dissipation

200W

Terminal Form

GULL WING

Mounting Type

Surface Mount

Mount

Surface Mount

Max Collector Current

40A

Turn On Time

2900 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

375V

Base Part Number

STGB20

Time@Peak Reflow Temperature-Max (s)

30

Vce(on) (Max) @ Vge, Ic

2V @ 4.5V, 20A

Turn Off Time-Nom (toff)

15000 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

2.3μs/2μs

Switching Energy

11.8mJ (off)

Gate-Emitter Thr Voltage-Max

2V

Radiation Hardening

No

Pin Count

3

RoHS Status

ROHS3 Compliant

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