STMicroelectronics STGB30H65DFB2

SKU: STGB30H65DFB2-9

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Manufacturer Part :
STGB30H65DFB2
Manufacturer :
STMicroelectronics
Package :
RoHS :
STGB30H65DFB2 Datasheet :
STGB30H65DFB2

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Maximum Operating Temperature

+ 175 C

Supplier Device Package

D2PAK-3

Base Product Number

STGB30

Brand

STMicroelectronics

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

50 A

Factory Pack QuantityFactory Pack Quantity

1000

Maximum Collector Emitter Voltage

650 V

Unit Weight

0.048678 oz

Mounting Type

Surface Mount

Mfr

STMicroelectronics

Minimum Operating Temperature

– 55 C

Mounting Styles

SMD/SMT

MSL

MSL 1 – Unlimited

Package Type

D2PAK (TO-263)

Pd - Power Dissipation

167 W

Product Status

Active

Test Conditions

400V, 30A, 6.8Ohm, 15V

Maximum Gate Emitter Voltage

±20V

Operating Temperature

-55°C ~ 175°C (TJ)

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

167

Input Type

Standard

Power - Max

167 W

Packaging

MouseReel

Series

HB2

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 30A

Continuous Collector Current

50

IGBT Type

Trench Field Stop

Gate Charge

90 nC

Current - Collector Pulsed (Icm)

90 A

Td (on/off) @ 25°C

18.4ns/71ns

Switching Energy

270µJ (on), 310µJ (off)

Reverse Recovery Time (trr)

115 ns

Product Category

IGBT Transistors

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