STMicroelectronics STGB35N35LZ-1

SKU: STGB35N35LZ-1-9

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Manufacturer Part :
STGB35N35LZ-1
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGB35N35LZ-1 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Base Part Number

STGB35

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

345V

Number of Elements

1

Test Conditions

300V, 15A, 5V

Packaging

Tube

Series

PowerMESH™

Operating Temperature

-55°C~175°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

VOLTAGE CLAMPING

Max Power Dissipation

176W

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

7600 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 4.5V, 15A

Input Type

Logic

Power - Max

176W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

380V

Max Collector Current

40A

Element Configuration

Single

Pin Count

3

Turn Off Time-Nom (toff)

37000 ns

Gate Charge

49nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

1.1μs/26.5μs

Gate-Emitter Voltage-Max

12V

Radiation Hardening

No

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

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