STMicroelectronics STGD10NC60HT4

SKU: STGD10NC60HT4-9

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Manufacturer Part :
STGD10NC60HT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGD10NC60HT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Series

PowerMESH™

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Factory Lead Time

8 Weeks

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Max Power Dissipation

60W

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Base Part Number

STGD10

Turn On Time

19 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 5A

Element Configuration

Single

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

20A

Max Breakdown Voltage

600V

Pin Count

3

JESD-30 Code

R-PSSO-G2

Turn Off Time-Nom (toff)

247 ns

Gate Charge

19.2nC

Td (on/off) @ 25°C

14.2ns/72ns

Switching Energy

31.8μJ (on), 95μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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