STMicroelectronics STGD10NC60SDT4

SKU: STGD10NC60SDT4-9

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Manufacturer Part :
STGD10NC60SDT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
ROHS3 Compliant
STGD10NC60SDT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Obsolete

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Base Part Number

STGD10

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Additional Feature

ULTRA FAST

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Mounting Type

Surface Mount

Mount

Surface Mount

Max Breakdown Voltage

600V

JESD-30 Code

R-PSSO-G2

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

18A

Reverse Recovery Time

22 ns

Turn On Time

22.5 ns

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 5A

Pin Count

3

Turn Off Time-Nom (toff)

560 ns

Gate Charge

18nC

Current - Collector Pulsed (Icm)

25A

Td (on/off) @ 25°C

19ns/160ns

Switching Energy

60μJ (on), 340μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

Element Configuration

Single

RoHS Status

ROHS3 Compliant

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