STMicroelectronics STGD7NB60KT4

SKU: STGD7NB60KT4-9

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Manufacturer Part :
STGD7NB60KT4
Manufacturer :
STMicroelectronics
Package :
RoHS :
Non-RoHS Compliant
STGD7NB60KT4 Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Part Status

Obsolete

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 7A, 10 Ω, 15V

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

30

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

70W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

7A

Mounting Type

Surface Mount

Mount

Surface Mount

Max Breakdown Voltage

600V

Pin Count

3

Element Configuration

Single

Power Dissipation

70W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

14A

JEDEC-95 Code

TO-252AA

Turn On Time

21 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 7A

Base Part Number

STGD7

Turn Off Time-Nom (toff)

202 ns

Gate Charge

32.7nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

15ns/50ns

Switching Energy

95μJ (on), 140μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Radiation Hardening

No

JESD-30 Code

R-PSSO-G2

RoHS Status

Non-RoHS Compliant

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