STMicroelectronics STGF20H65DFB2

SKU: STGF20H65DFB2-9

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Manufacturer Part :
STGF20H65DFB2
Manufacturer :
STMicroelectronics
Package :
TO-220-3 Full Pack
RoHS :
STGF20H65DFB2 Datasheet :
STGF20H65DFB2

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Maximum Operating Temperature

+ 175 C

Supplier Device Package

TO-220FP

Base Product Number

STGF20

Brand

STMicroelectronics

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

40 A

Factory Pack QuantityFactory Pack Quantity

1000

Maximum Collector Emitter Voltage

650 V

Unit Weight

0.059613 oz

Maximum Gate Emitter Voltage

±20V

Mfr

STMicroelectronics

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-220FP

Pd - Power Dissipation

45 W

Product Status

Active

Test Conditions

400V, 20A, 10Ohm, 15V

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Product Type

IGBT Transistors

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

45

Input Type

Standard

Power - Max

45 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Operating Temperature

-55°C ~ 175°C (TJ)

Continuous Collector Current

40

IGBT Type

Trench Field Stop

Gate Charge

56 nC

Current - Collector Pulsed (Icm)

60 A

Td (on/off) @ 25°C

16ns/78.8ns

Switching Energy

265μJ (on), 214μJ (off)

Reverse Recovery Time (trr)

215 ns

Series

HB2

Product Category

IGBT Transistors

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