STMicroelectronics STGP10NC60KD

SKU: STGP10NC60KD-9

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Manufacturer Part :
STGP10NC60KD
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP10NC60KD Datasheet :
STGP10NC60KD

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Description

Specification

Processor

Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Single

Factory Lead Time

8 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

65W

Current Rating

20A

Base Part Number

STGP10

Pin Count

3

Series

PowerMESH™

Power Dissipation

25W

Gate Charge

19nC

Current - Collector Pulsed (Icm)

30A

Transistor Application

POWER CONTROL

Rise Time

6ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

20A

Reverse Recovery Time

22 ns

JEDEC-95 Code

TO-220AB

Turn On Time

23 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 5A

Turn Off Time-Nom (toff)

242 ns

Case Connection

ISOLATED

Input Type

Standard

Td (on/off) @ 25°C

17ns/72ns

Switching Energy

55μJ (on), 85μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Height

9.15mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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