STMicroelectronics STGP30H60DFB

SKU: STGP30H60DFB-9

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Manufacturer Part :
STGP30H60DFB
Manufacturer :
STMicroelectronics
Package :
TO-220-3
RoHS :
ROHS3 Compliant
STGP30H60DFB Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Base Part Number

STGP30

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Packaging

Tube

Part Status

Active

Operating Temperature

-55°C~175°C TJ

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

260W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

20 Weeks

JEDEC-95 Code

TO-220AB

Turn On Time

51.1 ns

Input Type

Standard

Power - Max

260W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

60A

Reverse Recovery Time

53 ns

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

Turn Off Time-Nom (toff)

223 ns

IGBT Type

Trench Field Stop

Gate Charge

149nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

37ns/146ns

Switching Energy

383μJ (on), 293μJ (off)

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

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