STMicroelectronics STGW100H65FB2-4

SKU: STGW100H65FB2-4-9

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Manufacturer Part :
STGW100H65FB2-4
Manufacturer :
STMicroelectronics
Package :
TO-247-4
RoHS :
STGW100H65FB2-4 Datasheet :
STGW100H65FB2-4

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Maximum Operating Temperature

+ 150 C

Supplier Device Package

TO-247-4

Base Product Number

STGW100

Brand

STMicroelectronics

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

145 A

Factory Pack QuantityFactory Pack Quantity

600

Maximum Collector Emitter Voltage

650 V

Unit Weight

0.156264 oz

Maximum Gate Emitter Voltage

±20V

Mfr

Reliance North America

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tape & Box (TB)

Package Type

TO247-4

Pd - Power Dissipation

441 W

Product Status

Active

Test Conditions

400V, 100A, 3.3Ohm, 15V

Package / Case

TO-247-4

Mounting Type

Through Hole

Product Type

IGBT Transistors

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Pin Count

4

Configuration

Single

Power Dissipation

441

Input Type

Standard

Power - Max

441 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Channel Type

N

Operating Temperature

-55°C ~ 175°C (TJ)

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 100A

Continuous Collector Current

145

IGBT Type

Trench Field Stop

Gate Charge

288 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

23ns/141ns

Switching Energy

1.06mJ (on), 1.14mJ (off)

Series

*

Product Category

IGBT Transistors

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