STMicroelectronics STGW60H65DF

SKU: STGW60H65DF-9

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Manufacturer Part :
STGW60H65DF
Manufacturer :
STMicroelectronics
Package :
TO-247-3
RoHS :
ROHS3 Compliant
STGW60H65DF Datasheet :

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Description

Specification

Processor

Manufacturer

STMicroelectronics

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 60A, 10 Ω, 15V

Base Part Number

STGW60

Factory Lead Time

32 Weeks

Packaging

Tube

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

360W

Turn Off Delay Time

165 ns

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 60A

Turn Off Time-Nom (toff)

247 ns

Turn On Delay Time

67 ns

Power - Max

360W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

350V

Max Collector Current

120A

Reverse Recovery Time

62 ns

Turn On Time

113 ns

Element Configuration

Single

Input Type

Standard

IGBT Type

Trench Field Stop

Gate Charge

206nC

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

67ns/165ns

Switching Energy

1.5mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

20V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

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