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Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Collector-Emitter Breakdown Voltage |
650V |
Base Part Number |
STGW80 |
Factory Lead Time |
20 Weeks |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
469W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Test Conditions |
400V, 80A, 10 Ω, 15V |
Element Configuration |
Single |
Gate Charge |
414nC |
Current - Collector Pulsed (Icm) |
240A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
120A |
Reverse Recovery Time |
85 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 80A |
IGBT Type |
Trench Field Stop |
Input Type |
Standard |
Power - Max |
469W |
Td (on/off) @ 25°C |
84ns/280ns |
Switching Energy |
2.1mJ (on), 1.5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.35kV |
Number of Elements |
1 |
ECCN Code |
EAR99 |
Factory Lead Time |
16 Weeks |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Collector Emitter Voltage (VCEO) |
1.35kV |
Max Collector Current |
40A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
288W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Max Power Dissipation |
288W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
1350V |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 20A |
Turn Off Time-Nom (toff) |
450 ns |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
-/235ns |
Switching Energy |
950μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Dual |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 27A, 10 Ω, 15V |
Turn Off Delay Time |
240 ns |
Packaging |
Tube |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
FAST SWITCHING |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Terminal Position |
SINGLE |
Current Rating |
49A |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
196A |
Turn On Delay Time |
26 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
18ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7V |
Max Collector Current |
49A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
46 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 27A |
Turn Off Time-Nom (toff) |
690 ns |
Case Connection |
COLLECTOR |
Power Dissipation |
160W |
Td (on/off) @ 25°C |
26ns/240ns |
Switching Energy |
370μJ (on), 1.81mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
8.77mm |
Length |
10.54mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1998 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Current Rating |
40A |
Element Configuration |
Single |
Power Dissipation |
160W |
Case Connection |
COLLECTOR |
Packaging |
Bulk |
Turn On Delay Time |
54 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
160A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
40A |
Turn Off Time-Nom (toff) |
330 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
57ns |
Td (on/off) @ 25°C |
54ns/110ns |
Switching Energy |
710μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
120ns |
Height |
24.6mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Dual |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 41A, 5 Ω, 15V |
Turn Off Delay Time |
650 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
JESD-609 Code |
e3 |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
70A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
140A |
Td (on/off) @ 25°C |
33ns/650ns |
Turn On Delay Time |
33 ns |
Rise Time |
30ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.36V |
Max Collector Current |
70A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
Turn Off Time-Nom (toff) |
1700 ns |
Gate Charge |
180nC |
Case Connection |
COLLECTOR |
Power Dissipation |
200W |
Switching Energy |
720μJ (on), 8.27mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
600ns |
Height |
20.2946mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 10A, 23 Ω, 15V |
Turn Off Delay Time |
220 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
100W |
Current Rating |
20A |
Element Configuration |
Single |
Power Dissipation |
100W |
Packaging |
Tube |
Input Type |
Standard |
Gate Charge |
53nC |
Current - Collector Pulsed (Icm) |
40A |
Rise Time |
79ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
4.2V |
Max Collector Current |
20A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
121 ns |
Vce(on) (Max) @ Vge, Ic |
4.2V @ 15V, 10A |
Turn Off Time-Nom (toff) |
637 ns |
Turn On Delay Time |
39 ns |
Transistor Application |
MOTOR CONTROL |
Td (on/off) @ 25°C |
39ns/220ns |
Switching Energy |
950μJ (on), 1.15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
140ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
COLLECTOR |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
200 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Last Time Buy |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
35ns/200ns |
Rise Time |
15ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.7V |
Max Collector Current |
45A |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
49 ns |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
Turn Off Time-Nom (toff) |
600 ns |
Gate Charge |
160nC |
Turn On Delay Time |
35 ns |
Input Type |
Standard |
Switching Energy |
530μJ (on), 1.41mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
500ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Part Status |
Obsolete |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRG4RC10SDPBF |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
31ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
JEDEC-95 Code |
TO-252AA |
Turn On Time |
106 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Power Dissipation |
38W |
Element Configuration |
Single |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
1080ns |
Height |
1.2446mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 22A, 3.3 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
308W |
Current Rating |
60A |
Element Configuration |
Single |
Power Dissipation |
308W |
Packaging |
Bulk |
Input Type |
Standard |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
120A |
Rise Time |
6ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.55V |
Max Collector Current |
60A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
34 ns |
Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 35A |
Turn Off Time-Nom (toff) |
142 ns |
IGBT Type |
NPT |
Turn On Delay Time |
26 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
26ns/110ns |
Switching Energy |
220μJ (on), 215μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2006 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 48A, 10 Ω, 15V |
Turn Off Delay Time |
145 ns |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
300V |
Max Power Dissipation |
330W |
Current Rating |
96A |
Base Part Number |
IRGP4063D |
Element Configuration |
Single |
Power Dissipation |
330W |
Case Connection |
COLLECTOR |
Packaging |
Tube |
Turn On Delay Time |
60 ns |
Gate Charge |
95nC |
Current - Collector Pulsed (Icm) |
144A |
Drain to Source Voltage (Vdss) |
300V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.14V |
Max Collector Current |
96A |
Reverse Recovery Time |
115 ns |
Continuous Drain Current (ID) |
96A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
2.14V @ 15V, 48A |
Turn Off Time-Nom (toff) |
210 ns |
IGBT Type |
Trench |
Transistor Application |
POWER CONTROL |
Rise Time |
56ns |
Td (on/off) @ 25°C |
60ns/145ns |
Switching Energy |
625μJ (on), 1.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
46ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 10 Ω, 15V |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Packaging |
Tube |
Published |
2004 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
454W |
Rise Time-Max |
90ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn Off Delay Time |
200 ns |
Turn On Delay Time |
50 ns |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
50ns/200ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
140A |
Reverse Recovery Time |
155 ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
120 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
Trench |
Gate Charge |
150nC |
Power - Max |
454W |
Transistor Application |
POWER CONTROL |
Switching Energy |
2.47mJ (on), 2.16mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
80ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.13mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
130 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
390W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
390W |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Gate Charge |
205nC |
Current - Collector Pulsed (Icm) |
150A |
Rise Time |
10ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.85V |
Max Collector Current |
75A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
39 ns |
Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
Turn Off Time-Nom (toff) |
161 ns |
IGBT Type |
NPT |
Turn On Delay Time |
30 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
30ns/130ns |
Switching Energy |
255μJ (on), 375μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
20ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Active |
Pbfree Code |
yes |
JESD-609 Code |
e3 |
Published |
2013 |
Max Power Dissipation |
454W |
Packaging |
Tube |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Switching Energy |
1.6mJ (on), 1.1mJ (off) |
Td (on/off) @ 25°C |
18ns/145ns |
Gate Charge |
212nC |
IGBT Type |
Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
136 ns |
Max Collector Current |
160A |
Collector Emitter Voltage (VCEO) |
2.3V |
Power - Max |
454W |
Input Type |
Standard |
Element Configuration |
Single |
Lead Free |
Lead Free |
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